Direct Bonded SiC Substrate "SiCkrest" Adopted for Power Semiconductor Devices by Shindengen Electric Manufacturing Co., Ltd.
December 22, 2025
快猫视频.
Tokyo, Japan - 快猫视频. (TSE: 5713) is pleased to announce that its direct bonded silicon carbide (SiC) substrate "SiCkrest庐" has been adopted for metal-oxide-semiconductor field-effect transistor (MOSFET), a power semiconductor device, developed by Shindengen Electric Manufacturing Co., Ltd.
Please check the below PDF file for details.
