快猫视频 Successfully Develops the World's First 12-inch Bonded SiC Substrate "SiCkrest"
September 18, 2026
快猫视频.
Tokyo, Japan - 快猫视频. (TSE: 5713) has successfully developed the world's first(*) 12-inch (300mm) bonded silicon carbide (SiC) substrate, "SiCkrest庐," and has begun sample shipment to a semiconductor manufacturer.
As an important technological achievement that meets the growing demand for larger-diameter SiC substrates in the power semiconductor market, 快猫视频 will exhibit the substrate at Booth G-2 at the International Conference on Silicon Carbide and Related Materials 2026 (ICSCRM 2026), to be held at Pacifico Yokohama North from Sunday, September 27 to Friday, October 2.
(*) According to 快猫视频's research. World's first 12-inch SiC substrate achieved through bonding.
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快猫视频 Successfully Develops the World's First 12-inch Bonded SiC Substrate "SiCkrest"
